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Robert C. Fitch, Jr.
Robert C. Fitch, Jr.
Principal Electronics Engineer, AFRL
Bestätigte E-Mail-Adresse bei us.af.mil
Titel
Zitiert von
Zitiert von
Jahr
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
5812016
Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices
GH Jessen, RC Fitch, JK Gillespie, G Via, A Crespo, D Langley, ...
IEEE Transactions on Electron Devices 54 (10), 2589-2597, 2007
527*2007
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
3702016
-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
2992017
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
2192017
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 2017
1772017
Ultra-low resistance ohmic contacts in graphene field effect transistors
JS Moon, M Antcliffe, HC Seo, D Curtis, S Lin, A Schmitz, I Milosavljevic, ...
Applied Physics Letters 100 (20), 2012
1772012
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1752003
Real-time adaptive contrast enhancement
PM Narendra, RC Fitch
IEEE transactions on pattern analysis and machine intelligence, 655-661, 1981
1631981
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
1142019
Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors
B Bayraktaroglu, J Barrette, L Kehias, CI Huang, R Fitch, R Neidhard, ...
IEEE electron device letters 14 (10), 493-495, 1993
1081993
Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors
B Bayraktaroglu, J Barrette, L Kehias, CI Huang, R Fitch, R Neidhard, ...
IEEE electron device letters 14 (10), 493-495, 1993
1081993
Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors
HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 2005
842005
Multiplexed piezoelectric polymer tactile sensor
RCF Edward S Kolesar, Rocky R Reston, Douglas G Ford
Journal of Robotic Systems 9 (1), 37-63, 1992
78*1992
ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance
AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
752019
Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
752012
Implementation of High-Power-Density-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
RC Fitch, DE Walker, AJ Green, SE Tetlak, JK Gillespie, RD Gilbert, ...
IEEE electron device letters 36 (10), 1004-1007, 2015
682015
Implementation of High-Power-Density-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
RC Fitch, DE Walker, AJ Green, SE Tetlak, JK Gillespie, RD Gilbert, ...
IEEE electron device letters 36 (10), 1004-1007, 2015
682015
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, A Crespo, TJ Jenkins, ...
IEEE Electron Device Letters 23 (9), 505-507, 2002
652002
Electrical characteristics of proton-irradiated passivated AlGaN/GaN high electron mobility transistors
B Luo, J Kim, F Ren, JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, ...
Applied physics letters 82 (9), 1428-1430, 2003
552003
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