| Point defects, diffusion processes, and swirl defect formation in silicon TY Tan, U Gösele Applied Physics A 37 (1), 1-17, 1985 | 623 | 1985 |
| Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si TY Tan, EE Gardner, WK Tice Applied Physics Letters 30 (4), 175-176, 1977 | 600 | 1977 |
| Silicon nanowhiskers grown on< 111> Si substrates by molecular-beam epitaxy L Schubert, P Werner, ND Zakharov, G Gerth, FM Kolb, L Long, U Gösele, ... Applied Physics Letters 84 (24), 4968-4970, 2004 | 441 | 2004 |
| A model for the silicon wafer bonding process R Stengl, T Tan, U Gösele Japanese Journal of Applied Physics 28 (10R), 1735, 1989 | 427 | 1989 |
| A “smarter-cut” approach to low temperature silicon layer transfer QY Tong, R Scholz, U Gösele, TH Lee, LJ Huang, YL Chao, TY Tan Applied Physics Letters 72 (1), 49-51, 1998 | 387 | 1998 |
| Oxygen diffusion and thermal donor formation in silicon U Gösele, TY Tan Applied Physics A 28, 79-92, 1982 | 358 | 1982 |
| Oxygen precipitation and the generation of dislocations in silicon TY Tan, WK Tice The Philosophical Magazine: A Journal of Theoretical Experimental and …, 1976 | 247 | 1976 |
| Ion-induced defects in semiconductors JW Corbett, JP Karins, TY Tan Nuclear Instruments and Methods 182, 457-476, 1981 | 233 | 1981 |
| Carbon-induced undersaturation of silicon self-interstitials R Scholz, U Gösele, JY Huh, TY Tan Applied Physics Letters 72 (2), 200-202, 1998 | 229 | 1998 |
| Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs TY Tan, U Gösele Applied physics letters 52 (15), 1240-1242, 1988 | 209 | 1988 |
| The contribution of vacancies to carbon out-diffusion in silicon RF Scholz, P Werner, U Gösele, TY Tan Applied Physics Letters 74 (3), 392-394, 1999 | 200 | 1999 |
| Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials TY Tan, U Gösele, S Yu Critical Reviews in Solid State and Material Sciences 17 (1), 47-106, 1991 | 200 | 1991 |
| Diffusion mechanism of zinc and beryllium in gallium arsenide S Yu, TY Tan, U Gösele Journal of applied physics 69 (6), 3547-3565, 1991 | 198 | 1991 |
| Order-disorder transition in single-crystal silicon induced by pulsed UV laser irradiation R Tsu, RT Hodgson, TY Tan, JE Baglin Physical Review Letters 42 (20), 1356, 1979 | 190 | 1979 |
| Wave interactions in saturable absorbers SE Schwarz, TY Tan Applied Physics Letters 10 (1), 4-7, 1967 | 174 | 1967 |
| Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates SL Hsia, TY Tan, P Smith, GE McGuire Journal of applied physics 72 (5), 1864-1873, 1992 | 154 | 1992 |
| Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon TY Tan Philosophical Magazine A 44 (1), 101-125, 1981 | 152 | 1981 |
| Low energy planes for tilt grain boundaries in gold PJ Goodhew, TY Tan, RW Balluffi Acta Metallurgica 26 (4), 557-567, 1978 | 148 | 1978 |
| Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications PS Plekhanov, R Gafiteanu, UM Gösele, TY Tan Journal of Applied Physics 86 (5), 2453-2458, 1999 | 147 | 1999 |
| Formation of epitaxial CoSi2 films on (001) silicon using Ti‐Co alloy and bimetal source materials SL Hsia, TY Tan, P Smith, GE McGuire Journal of applied physics 70 (12), 7579-7587, 1991 | 145 | 1991 |
Raphael TsuUniversity of North Carolina at CharlotteBestätigte E-Mail-Adresse bei uncc.edu
