| Fermi-level pinning and charge neutrality level in germanium A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou Applied physics letters 89 (25), 2006 | 703 | 2006 |
| Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111) P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, E Golias, ... Applied Physics Letters 103 (25), 2013 | 300 | 2013 |
| High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ... Nanoscale 7 (17), 7896-7905, 2015 | 154 | 2015 |
| Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ... Journal of Applied Physics 103 (1), 2008 | 141 | 2008 |
| Evidence for hybrid surface metallic band in (4× 4) silicene on Ag (111) D Tsoutsou, E Xenogiannopoulou, E Golias, P Tsipas, A Dimoulas Applied Physics Letters 103 (23), 2013 | 138 | 2013 |
| Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy KE Aretouli, P Tsipas, D Tsoutsou, J Marquez-Velasco, ... Applied Physics Letters 106 (14), 2015 | 135 | 2015 |
| Modeling of negatively charged states at the Ge surface and interfaces P Tsipas, A Dimoulas Applied Physics Letters 94 (1), 2009 | 129 | 2009 |
| Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures KE Aretouli, D Tsoutsou, P Tsipas, J Marquez-Velasco, ... ACS applied materials & interfaces 8 (35), 23222-23229, 2016 | 113 | 2016 |
| Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ... ACS nano 12 (2), 1696-1703, 2018 | 107 | 2018 |
| Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag (1 1 1) F d’Acapito, S Torrengo, E Xenogiannopoulou, P Tsipas, JM Velasco, ... Journal of Physics: Condensed Matter 28 (4), 045002, 2016 | 90 | 2016 |
| Molecular beam epitaxy of thin HfTe2 semimetal films S Aminalragia-Giamini, J Marquez-Velasco, P Tsipas, D Tsoutsou, ... 2D Materials 4 (1), 015001, 2016 | 74 | 2016 |
| Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures D Tsoutsou, KE Aretouli, P Tsipas, J Marquez-Velasco, ... ACS applied materials & interfaces 8 (3), 1836-1841, 2016 | 74 | 2016 |
| Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates G Mavrou, P Tsipas, A Sotiropoulos, S Galata, Y Panayiotatos, ... Applied Physics Letters 93 (21), 2008 | 71 | 2008 |
| Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ... Applied physics letters 93 (8), 2008 | 70 | 2008 |
| Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition C Zacharaki, P Tsipas, S Chaitoglou, S Fragkos, M Axiotis, A Lagoyiannis, ... Applied Physics Letters 114 (11), 2019 | 47 | 2019 |
| Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric P Tsipas, E Xenogiannopoulou, S Kassavetis, D Tsoutsou, E Golias, ... Acs Nano 8 (7), 6614-6619, 2014 | 46 | 2014 |
| Surface electronic bands of submonolayer Ge on Ag (111) E Golias, E Xenogiannopoulou, D Tsoutsou, P Tsipas, SA Giamini, ... Physical Review B 88 (7), 075403, 2013 | 46 | 2013 |
| Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition D Tsoutsou, G Apostolopoulos, SF Galata, P Tsipas, A Sotiropoulos, ... Journal of Applied Physics 106 (2), 2009 | 45 | 2009 |
| Epitaxial ZrSe2/MoSe2 semiconductor vd Waals heterostructures on wide band gap AlN substrates P Tsipas, D Tsoutsou, J Marquez-Velasco, KE Aretouli, ... Microelectronic Engineering 147, 269-272, 2015 | 43 | 2015 |
| Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo2C heterostructures over liquid catalyst S Chaitoglou, P Tsipas, T Speliotis, G Kordas, A Vavouliotis, A Dimoulas Journal of Crystal Growth 495, 46-53, 2018 | 40 | 2018 |
Sigiava Aminalragia-GiaminiResearcher, Space Applications and Research ConcultancyBestätigte E-Mail-Adresse bei sparc.gr
