Folgen
Petra SPECHT
Petra SPECHT
Bestätigte E-Mail-Adresse bei berkeley.edu
Titel
Zitiert von
Zitiert von
Jahr
Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
M Luysberg, H Sohn, A Prasad, P Specht, Z Liliental-Weber, ER Weber, ...
Journal of applied physics 83 (1), 561-566, 1998
1661998
Structural and optical properties of vertically aligned InP quantum dots
MK Zundel, P Specht, K Eberl, NY Jin-Phillipp, F Phillipp
Applied physics letters 71 (20), 2972-2974, 1997
1611997
High-resolution in situ and ex situ TEM studies on graphene formation and growth on Pt nanoparticles
Z Peng, F Somodi, S Helveg, C Kisielowski, P Specht, AT Bell
Journal of catalysis 286, 22-29, 2012
1302012
Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs
M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, P Specht, ...
Applied physics letters 74 (9), 1269-1271, 1999
1041999
Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies
M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, RC Lutz, ...
Applied Physics Letters 74 (21), 3134-3136, 1999
951999
Real-time sub-ngstrom imaging of reversible and irreversible conformations in rhodium catalysts and graphene
C Kisielowski, LW Wang, P Specht, HA Calderon, B Barton, B Jiang, ...
Physical Review B 88 (2), 024305, 2013
752013
Observing gas-catalyst dynamics at atomic resolution and single-atom sensitivity
S Helveg, CF Kisielowski, JR Jinschek, P Specht, G Yuan, H Frei
Micron 68, 176-185, 2015
652015
Distortion and segregation in a dislocation core region at atomic resolution
X Xu, SP Beckman, P Specht, ER Weber, DC Chrzan, RP Erni, I Arslan, ...
Physical review letters 95 (14), 145501, 2005
652005
Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy
P Specht, JC Ho, X Xu, R Armitage, ER Weber, R Erni, C Kisielowski
Solid state communications 135 (5), 340-344, 2005
652005
Defect identification in GaAs grown at low temperatures by positron annihilation
J Gebauer, F Börner, R Krause-Rehberg, TEM Staab, ...
Journal of Applied Physics 87 (12), 8368-8379, 2000
552000
Discovering Hidden Material Properties of MgCl2 at Atomic Resolution with Structured Temporal Electron Illumination of Picosecond Time Resolution
C Kisielowski, P Specht, B Freitag, ER Kieft, W Verhoeven, JFM van Rens, ...
Advanced Functional Materials 29 (11), 1807818, 2019
492019
Phase separation in In x Ga1− x N
TP Bartel, P Specht, JC Ho, C Kisielowski
Philosophical Magazine 87 (13), 1983-1998, 2007
492007
The influence of structural properties on conductivity and luminescence of MBE grown InN
P Specht, R Armitage, J Ho, E Gunawan, Q Yang, X Xu, C Kisielowski, ...
Journal of crystal growth 269 (1), 111-118, 2004
492004
Analysis of twin defects in GaAs (111) B molecular beam epitaxy growth
Y Park, MJ Cich, R Zhao, P Specht, ER Weber, E Stach, S Nozaki
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
482000
Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ...
Applied physics letters 107 (8), 2015
472015
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C
P Specht, RC Lutz, R Zhao, ER Weber, WK Liu, K Bacher, FJ Towner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
461999
Defect control in As-rich GaAs
P Specht, S Jeong, H Sohn, M Luysberg, A Prasad, J Gebauer, ...
Materials Science Forum 258, 951-956, 1997
441997
Constricted dislocations and their use for TEM measurements of the velocities of edge and 60° dislocations in silicon. A new approach to the problem of kink migration
H Gottschalk, N Hiller, S Sauerland, P Specht, H Alexander
physica status solidi (a) 138 (2), 547-555, 1993
441993
Atomic resolution phase contrast imaging and in-line holography using variable voltage and dose rate
B Barton, B Jiang, CY Song, P Specht, H Calderon, C Kisielowski
Microscopy and Microanalysis 18 (5), 982-994, 2012
432012
Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs
AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ...
IEEE Electron Device Letters 35 (12), 1194-1196, 2014
392014
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20