Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi
Journal of Applied Physics 104 (12), 124301, 2008
127 2008 Reversed truncated cone composition distribution of In0. 8Ga0. 2As quantum dots overgrown by an In0. 1Ga0. 9As layer in a GaAs matrix A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ...
Applied physics letters 81 (27), 5150-5152, 2002
111 2002 Self-organized formation of GaSb/GaAs quantum rings R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
81 2008 Structure and intermixing of GaSb∕ GaAs quantum dots R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ...
Applied physics letters 85 (24), 5890-5892, 2004
71 2004 20 Gb/s 85 C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots F Hopfer, A Mutig, G Fiol, M Kuntz, VA Shchukin, VA Haisler, T Warming, ...
IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1302-1308, 2007
68 2007 Quantum ring formation and antimony segregation in nanostructures R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
57 2008 Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ...
Applied physics letters 85, 3848, 2004
56 2004 Atomic structure and optical properties of InAs submonolayer depositions in GaAs A Lenz, H Eisele, J Becker, JH Schulze, TD Germann, F Luckert, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
54 2011 Direct measurement of the band gap and Fermi level position at P Ebert, S Schaafhausen, A Lenz, A Sabitova, L Ivanova, M Daehne, ...
Applied physics letters 98 (6), 062103, 2011
51 2011 Direct measurement and analysis of the conduction band density of states in diluted GaAs 1− x N x alloys L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ...
Physical Review B 82 (16), 161201, 2010
48 2010 Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ...
Physical Review B 93 (8), 085302, 2016
46 2016 Structure of InAs/GaAs quantum dots grown with Sb surfactant R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ...
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006
44 2006 Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
43 2005 Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
43 2005 Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs A Lenz, H Eisele, J Becker, L Ivanova, E Lenz, F Luckert, K Pötschke, ...
Applied physics express 3 (10), 105602, 2010
38 2010 A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, UW Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Express 3, 105602 (2010). A Lenz
Appl. Phys. Express 3, 105602, 2010
38 * 2010 Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy H Eisele, A Lenz, C Hennig, R Timm, M Ternes, M Dähne
Journal of crystal growth 248, 322-327, 2003
35 2003 Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy R Timm, H Eisele, A Lenz, L Ivanova, V Vosseburger, T Warming, ...
Nano letters 10 (10), 3972-3977, 2010
34 2010 Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters NN Ledentsov, F Hopfer, A Mutig, VA Shchukin, AV Savel'ev, G Fiol, ...
Physics and Simulation of Optoelectronic Devices XV 6468, 64681O, 2007
32 2007 Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ...
Applied Physics Letters 101 (22), 223110, 2012
27 2012