Matthew D. Pickett
Zitiert von
Zitiert von
Memristive switching mechanism for metal/oxide/metal nanodevices
JJ Yang, MD Pickett, X Li, DAA Ohlberg, DR Stewart, RS Williams
Nature nanotechnology 3 (7), 429-433, 2008
The mechanism of electroforming of metal oxide memristive switches
JJ Yang, F Miao, MD Pickett, DAA Ohlberg, DR Stewart, CN Lau, ...
Nanotechnology 20 (21), 215201, 2009
A scalable neuristor built with Mott memristors
MD Pickett, G Medeiros-Ribeiro, RS Williams
Nature materials 12 (2), 114-117, 2013
Switching dynamics in titanium dioxide memristive devices
MD Pickett, DB Strukov, JL Borghetti, JJ Yang, GS Snider, DR Stewart, ...
Journal of Applied Physics 106 (7), 2009
High switching endurance in TaOx memristive devices
JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ...
Applied Physics Letters 97 (23), 232102-232102-3, 2010
Direct identification of the conducting channels in a functioning memristive device
JP Strachan, MD Pickett, JJ Yang, S Aloni, AL David Kilcoyne, ...
Advanced materials 22 (32), 3573-3577, 2010
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
MD Pickett, RS Williams
Nanotechnology 23 (21), 215202, 2012
SPICE modeling of memristors
H Abdalla, MD Pickett
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 1832-1835, 2011
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 2012
Chemical natures and distributions of metal impurities in multicrystalline silicon materials
T Buonassisi, AA Istratov, MD Pickett, M Heuer, JP Kalejs, G Hahn, ...
Progress in Photovoltaics: Research and Applications 14 (6), 513-531, 2006
State dynamics and modeling of tantalum oxide memristors
JP Strachan, AC Torrezan, F Miao, MD Pickett, JJ Yang, W Yi, ...
IEEE Transactions on Electron Devices 60 (7), 2194-2202, 2013
Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2
S Kumar, MD Pickett, JP Strachan, G Gibson, Y Nishi, RS Williams
arXiv preprint arXiv:1510.06694, 2015
Control of metal impurities in “dirty” multicrystalline silicon for solar cells
AA Istratov, T Buonassisi, MD Pickett, M Heuer, ER Weber
Materials Science and Engineering: B 134 (2-3), 282-286, 2006
Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
T Buonassisi, AA Istratov, MD Pickett, MA Marcus, TF Ciszek, ER Weber
Applied Physics Letters 89 (4), 2006
Metal/TiO2 interfaces for memristive switches
JJ Yang, JP Strachan, F Miao, MX Zhang, MD Pickett, W Yi, DAA Ohlberg, ...
Applied physics A 102, 785-789, 2011
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
F Miao, W Yi, I Goldfarb, JJ Yang, MX Zhang, MD Pickett, JP Strachan, ...
ACS nano 6 (3), 2312-2318, 2012
Electrical transport and thermometry of electroformed titanium dioxide memristive switches
J Borghetti, DB Strukov, MD Pickett, JJ Yang, DR Stewart, RS Williams
Journal of Applied Physics 106 (12), 2009
Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System
MD Pickett, J Borghetti, JJ Yang, G Medeiros‐Ribeiro, RS Williams
Advanced Materials 23 (15), 1730-1733, 2011
Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution
G Medeiros-Ribeiro, F Perner, R Carter, H Abdalla, MD Pickett, ...
Nanotechnology 22 (9), 095702, 2011
Iron point defect reduction in multicrystalline silicon solar cells
MD Pickett, T Buonassisi
Applied Physics Letters 92 (12), 2008
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