Bhim Chamlagain
Bhim Chamlagain
Postdoctoral Scholar at NSTC, University of Central Florida; Wayne State University
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High Mobility WSe2 p-and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano letters 16 (6), 3594–3601, 2014
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
Polarized photocurrent response in black phosphorus field-effect transistors
Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian ...
Nanoscale 6, 8978-8983, 2014
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ...
Nano letters 16 (3), 1896-1902, 2016
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun-Jen Chuang, Meeghage ...
acs nano 8 (5), 5079–5088, 2014
Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions
T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu
Acs Nano 9 (5), 5357-5363, 2015
Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions
T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu
Nanoscale 7 (44), 18537-18541, 2015
Visualizing light scattering in silicon waveguides with black phosphorus photodetectors
T Wang, S Hu, B Chamlagain, T Hong, Z Zhou, SM Weiss, YQ Xu
Advanced Materials 28 (33), 7162-7166, 2016
Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors
B Chamlagain, Q Cui, S Paudel, MMC Cheng, PY Chen, Z Zhou
2D Materials 4 (3), 031002, 2017
Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics
Q Cui, M Sakhdari, B Chamlagain, HJ Chuang, Y Liu, MMC Cheng, ...
ACS applied materials & interfaces 8 (50), 34552-34558, 2016
ACS Nano 7, 4449 (2013)
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
URL http://pubs. acs. org/doi/abs/10.1021/nn401053g, 0
Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS2 Heterojunctions
TS Walmsley, B Chamlagain, U Rijal, T Wang, Z Zhou, YQ Xu
Advanced Optical Materials 7 (5), 1800832, 2019
Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment
B Chamlagain, SI Khondaker
Applied Physics Letters 116 (22), 223102, 2020
Correction to Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ...
ACS nano 8 (8), 8710-8710, 2014
Low pressure sulfurization and characterization of multilayer MoS2 for potential applications in supercapacitors
S Ghosh, SS Withanage, B Chamlagain, SI Khondaker, S Harish, ...
Energy, 117918, 2020
Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density
B Chamlagain, U Bhanu, S Mou, SI Khondaker
The Journal of Physical Chemistry C 124 (11), 6461-6466, 2020
Synthesis of highly dense MoO2/MoS2 core–shell nanoparticles via chemical vapor deposition
SS Withanage, V Charles, B Chamlagain, R Wheeler, S Mou, ...
Nanotechnology 32 (5), 055605, 2020
Scalable lateral heterojunction by chemical doping of 2D TMD thin films
B Chamlagain, SS Withanage, AC Johnston, SI Khondaker
Scientific reports 10 (1), 1-9, 2020
(Invited) Investigation of Interfacial Charge Transfer Doping of 2D MoS2
SI Khondaker, B Chamlagain
236th ECS Meeting (October 13-17, 2019), 2019
Low-Pressure Chemical Vapor Deposition Growth of Iron-Doped MoS2 Monolayers
S Fu, K Kang, X Wang, S Chen, EH Yang
APS 2019, A33. 009, 2019
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