Bhim Chamlagain
Bhim Chamlagain
Postdoctoral Scholar at NSTC, University of Central Florida; Wayne State University
Bestätigte E-Mail-Adresse bei wayne.edu
Titel
Zitiert von
Zitiert von
Jahr
High Mobility WSe2 p-and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano letters 16 (6), 3594–3601, 2014
3852014
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
3002013
Polarized photocurrent response in black phosphorus field-effect transistors
Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian ...
Nanoscale 6, 8978-8983, 2014
2912014
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ...
Nano letters 16 (3), 1896-1902, 2016
2802016
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun-Jen Chuang, Meeghage ...
acs nano 8 (5), 5079–5088, 2014
1692014
Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions
T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu
Nanoscale 7 (44), 18537-18541, 2015
852015
Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions
T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu
Acs Nano 9 (5), 5357-5363, 2015
832015
Visualizing light scattering in silicon waveguides with black phosphorus photodetectors
T Wang, S Hu, B Chamlagain, T Hong, Z Zhou, SM Weiss, YQ Xu
Advanced Materials 28 (33), 7162-7166, 2016
282016
Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors
B Chamlagain, Q Cui, S Paudel, MMC Cheng, PY Chen, Z Zhou
2D Materials 4 (3), 031002, 2017
272017
Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics
Q Cui, M Sakhdari, B Chamlagain, HJ Chuang, Y Liu, MMC Cheng, ...
ACS applied materials & interfaces 8 (50), 34552-34558, 2016
142016
Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS2 Heterojunctions
TS Walmsley, B Chamlagain, U Rijal, T Wang, Z Zhou, YQ Xu
Advanced Optical Materials 7 (5), 1800832, 2019
112019
ACS Nano 7, 4449 (2013)
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
URL http://pubs. acs. org/doi/abs/10.1021/nn401053g, 0
11
Low pressure sulfurization and characterization of multilayer MoS2 for potential applications in supercapacitors
S Ghosh, SS Withanage, B Chamlagain, SI Khondaker, S Harish, ...
Energy 203, 117918, 2020
72020
D. Tomá nek, Z. Zhou
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano Lett 14, 3594, 2014
72014
Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment
B Chamlagain, SI Khondaker
Applied Physics Letters 116 (22), 223102, 2020
62020
Correction to Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ...
ACS nano 8 (8), 8710-8710, 2014
22014
United States, Nanophase Materials Sciences, Oak Ridge
B Chamlagain, Q Li, NJ Ghimire, H Chuang, MM Perera, H Tu, Y Xu, ...
Materials Science, Technology Division, and Computer Engineering. Mobility …, 2014
22014
Scalable lateral heterojunction by chemical doping of 2D TMD thin films
B Chamlagain, SS Withanage, AC Johnston, SI Khondaker
Scientific reports 10 (1), 1-9, 2020
12020
Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density
B Chamlagain, U Bhanu, S Mou, SI Khondaker
The Journal of Physical Chemistry C 124 (11), 6461-6466, 2020
12020
Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures
Sajeevi S. Withanage, Bhim Chamlagain, Ammon C. Johnston, Saiful I. Khondaker
Advanced Electronic Materials, 2001057, 2021
2021
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