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M.Fátima Romero Rojo
M.Fátima Romero Rojo
Profesora Contratada Doctora, Universidad Francisco de Vitoria (Madrid)
Verified email at ufv.es
Title
Cited by
Cited by
Year
Cryptocurrencies and stock market indices. Are they related?
LA Gil-Alana, EJA Abakah, MFR Rojo
Research in International Business and Finance 51, 101063, 2020
2652020
Anisotropic absorption and emission of bulk AlN
M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ...
Physical Review B 87 (23), 235209, 2013
802013
Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs
S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle
IEEE Transactions on Electron Devices 60 (12), 4105-4111, 2013
732013
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
682013
Effects of Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT
MF Romero, A JimÉnezJimenez, J Miguel-SÁnchezMiguel-Sanchez, ...
IEEE Electron Device Letters 29 (3), 209-211, 2008
552008
Volatility persistence in cryptocurrency markets under structural breaks
EJA Abakah, LA Gil-Alana, G Madigu, F Romero-Rojo
International Review of Economics & Finance 69, 680-691, 2020
502020
Compound Semiconductor Devices-Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
MF Romero, A Jímenez, F González-Posada Flores, S Martin-Horcajo, ...
IEEE Transactions on Electron Devices 59 (2), 374, 2012
36*2012
Physics-based analytical model for input, output, and reverse capacitance of a GaN HEMT with the field-plate structure
D Čučak, M Vasić, O García, JA Oliver, P Alou, JA Cobos, A Wang, ...
IEEE Transactions on Power Electronics 32 (3), 2189-2202, 2017
332017
High-temperature microwave performance of submicron AlGaN/GaN HEMTs on SiC
R Cuerdo, E Sillero, MF Romero, MJ Uren, MA di Forte Poisson, E Muñoz, ...
IEEE Electron Device Letters 30 (8), 808-810, 2009
312009
Negative spin-exchange splitting in the exciton fine structure of AlN
M Feneberg, M Fátima Romero, B Neuschl, K Thonke, M Röppischer, ...
Applied Physics Letters 102 (5), 052112, 2013
272013
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 29 (11), 115013, 2014
222014
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2Gate Dielectric
Z Gao, MF Romero, F Calle
IEEE Transactions on Electron Devices 65 (8), 3142-3148, 2018
192018
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
Z Gao, MF Romero, A Redondo-Cubero, MA Pampillón, E San Andrés, ...
IEEE Electron Device Letters 38 (5), 611-614, 2017
192017
The impact of geopolitical risk on the behavior of oil prices and freight rates
M Monge, MFR Rojo, LA Gil-Alana
Energy 269, 126779, 2023
182023
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
S Martin-Horcajo, A Wang, A Bosca, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 30 (3), 035015, 2015
182015
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
Z Gao, MF Romero, MÁ Pampillón, E San Andrés, F Calle
IEEE Transactions on Electron Devices 63 (7), 2729-2734, 2016
162016
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ...
Applied Physics Letters 100 (21), 212101, 2012
162012
Cryptocurrencies and stock market indices. Are they related?. Research in International Business and Finance, 51, 101063
LA Gil-Alana, EJA Abakah, MFR Rojo
132019
Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition
MF Romero, MM Sanz, I Tanarro, A Jiménez, E Muñoz
Journal of Physics D: Applied Physics 43 (49), 495202, 2010
112010
Optical properties of magnesium doped AlxGa1−xN (0.61 ≤ x ≤ 0.73)
M Feneberg, S Osterburg, MF Romero, B Garke, R Goldhahn, ...
Journal of applied physics 116 (14), 143103, 2014
92014
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