A. A. Allerman
A. A. Allerman
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Zitiert von
Zitiert von
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
SR Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons
Applied Physics Letters 74 (5), 729-731, 1999
Three-dimensional control of light in a two-dimensional photonic crystal slab
E Chow, SY Lin, SG Johnson, PR Villeneuve, JD Joannopoulos, ...
Nature 407 (6807), 983-986, 2000
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm
KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
Band structure of In x Ga 1− x As 1− y N y alloys and effects of pressure
ED Jones, NA Modine, AA Allerman, SR Kurtz, AF Wright, ST Tozer, X Wei
Physical Review B 60 (7), 4430, 1999
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 031907, 2005
InGaAsN/GaAs heterojunction for multi-junction solar cells
SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys
AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
SR Kurtz, AA Allerman, CH Seager, RM Sieg, ED Jones
Applied Physics Letters 77 (3), 400-402, 2000
Time-resolved photoluminescence studies of
RA Mair, JY Lin, HX Jiang, ED Jones, AA Allerman, SR Kurtz
Applied Physics Letters 76 (2), 188-190, 2000
Type-II interband quantum cascade laser at 3.8 [micro sign] m
CH Lin, RQ Yang, D Zhang, SJ Murry, SS Pei, AA Allerman, SR Kurtz
Electronics Letters 33 (7), 598, 1997
High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser
WJ Alford, TD Raymond, AA Allerman
JOSA B 19 (4), 663-666, 2002
Strain relaxation in AlGaN multilayer structures by inclined dislocations
DM Follstaedt, SR Lee, AA Allerman, JA Floro
Journal of Applied Physics 105 (8), 083507, 2009
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ...
Applied Physics Letters 81 (11), 1940-1942, 2002
Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation
EW Young, KD Choquette, SL Chuang, KM Geib, AJ Fischer, AA Allerman
IEEE Photonics Technology Letters 13 (9), 927-929, 2001
An AlN/Al0.85Ga0.15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 033509, 2016
Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser
TD Raymond, WJ Alford, MH Crawford, AA Allerman
Optics letters 24 (16), 1127-1129, 1999
InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
AA Allerman, RM Biefeld, SR Kurtz
Applied physics letters 69 (4), 465-467, 1996
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