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A. A. Allerman
A. A. Allerman
Bestätigte E-Mail-Adresse bei sandia.gov
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Zitiert von
Zitiert von
Jahr
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
SR Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons
Applied Physics Letters 74 (5), 729-731, 1999
6731999
Three-dimensional control of light in a two-dimensional photonic crystal slab
E Chow, SY Lin, SG Johnson, PR Villeneuve, JD Joannopoulos, ...
Nature 407 (6807), 983-986, 2000
5532000
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm
KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
3812000
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
3322005
Band structure of In x Ga 1− x As 1− y N y alloys and effects of pressure
ED Jones, NA Modine, AA Allerman, SR Kurtz, AF Wright, ST Tozer, X Wei
Physical Review B 60 (7), 4430, 1999
2361999
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
2352004
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 031907, 2005
2332005
InGaAsN/GaAs heterojunction for multi-junction solar cells
SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
2252001
Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys
AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
2102004
Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
SR Kurtz, AA Allerman, CH Seager, RM Sieg, ED Jones
Applied Physics Letters 77 (3), 400-402, 2000
1982000
Time-resolved photoluminescence studies of
RA Mair, JY Lin, HX Jiang, ED Jones, AA Allerman, SR Kurtz
Applied Physics Letters 76 (2), 188-190, 2000
1922000
Type-II interband quantum cascade laser at 3.8 [micro sign] m
CH Lin, RQ Yang, D Zhang, SJ Murry, SS Pei, AA Allerman, SR Kurtz
Electronics Letters 33 (7), 598, 1997
1921997
High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser
WJ Alford, TD Raymond, AA Allerman
JOSA B 19 (4), 663-666, 2002
1772002
Strain relaxation in AlGaN multilayer structures by inclined dislocations
DM Follstaedt, SR Lee, AA Allerman, JA Floro
Journal of Applied Physics 105 (8), 083507, 2009
1622009
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
1592002
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ...
Applied Physics Letters 81 (11), 1940-1942, 2002
1482002
Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation
EW Young, KD Choquette, SL Chuang, KM Geib, AJ Fischer, AA Allerman
IEEE Photonics Technology Letters 13 (9), 927-929, 2001
1242001
An AlN/Al0.85Ga0.15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 033509, 2016
1232016
Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser
TD Raymond, WJ Alford, MH Crawford, AA Allerman
Optics letters 24 (16), 1127-1129, 1999
1231999
InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
AA Allerman, RM Biefeld, SR Kurtz
Applied physics letters 69 (4), 465-467, 1996
1171996
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