| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 206 | 2016 |
| Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz IEEE Journal of the Electron Devices Society 8, 780-788, 2020 | 73 | 2020 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 60 | 2018 |
| Reliability and variability of advanced CMOS devices at cryogenic temperatures A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 36 | 2020 |
| Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017 | 33 | 2017 |
| Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017 | 31 | 2017 |
| Superior NBTI in High- SiGe Transistors–Part I: Experimental M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ... IEEE Transactions on Electron Devices 64 (5), 2092-2098, 2017 | 31 | 2017 |
| Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ... IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020 | 22 | 2020 |
| Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ... IEEE Transactions on Electron Devices 66 (1), 241-248, 2018 | 22 | 2018 |
| Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation A Potočnik, S Brebels, J Verjauw, R Acharya, A Grill, D Wan, M Mongillo, ... Quantum Science and Technology 7 (1), 015004, 2021 | 18 | 2021 |
| Superior NBTI in high-k SiGe transistors–part II: Theory M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ... IEEE Transactions on Electron Devices 64 (5), 2099-2105, 2017 | 15 | 2017 |
| The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017 | 15 | 2017 |
| Characterization of interface defects with distributed activation energies in GaN-based MIS-HEMTs R Stradiotto, G Pobegen, C Ostermaier, M Waltl, A Grill, T Grasser IEEE Transactions on Electron Devices 64 (3), 1045-1052, 2017 | 14 | 2017 |
| Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023 | 13 | 2023 |
| A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 13 | 2020 |
| Hot-electron-induced punch-through (HEIP) effect in p-MOSFET enhanced by mechanical stress K Lee, B Kaczer, A Kruv, M Gonzalez, R Degraeve, S Tyaginov, A Grill, ... IEEE Electron Device Letters 42 (10), 1424-1427, 2021 | 12 | 2021 |
| Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs M Waltl, A Grill, G Rzepa, W Goes, J Franco, B Kaczer, J Mitard, T Grasser 2016 IEEE International Reliability Physics Symposium (IRPS), XT-02-1-XT-02-6, 2016 | 12 | 2016 |
| Comphy v3. 0—a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ... Microelectronics Reliability 146, 115004, 2023 | 11 | 2023 |
| Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs A Grill, B Stampfer, M Waltl, KS Im, JH Lee, C Ostermaier, H Ceric, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-5.1-3B-5.5, 2017 | 11 | 2017 |
| Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021 | 10 | 2021 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEVerified email at iue.tuwien.ac.at
